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Launa Carrozza
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<br>High Bandwidth Memory (HBM) is a computer [Memory Wave Protocol](https://git.xxzz.space/emeliacapehart) interface for 3D-stacked synchronous dynamic random-entry memory (SDRAM) initially from Samsung, AMD and SK Hynix. RAM in upcoming CPUs, and FPGAs and in some supercomputers (such as the NEC SX-Aurora TSUBASA and Fujitsu A64FX). HBM achieves greater bandwidth than DDR4 or GDDR5 whereas using much less power, and in a considerably smaller type issue. That is achieved by stacking up to eight DRAM dies and an optionally available base die which might embody buffer circuitry and take a look at logic. The stack is usually related to the memory controller on a GPU or CPU by means of a substrate, equivalent to a silicon interposer. Alternatively, the memory die could possibly be stacked straight on the CPU or GPU chip. Throughout the stack the dies are vertically interconnected by by way of-silicon vias (TSVs) and microbumps. The HBM technology is comparable in precept however incompatible with the Hybrid Memory Cube (HMC) interface developed by Micron Expertise. HBM memory bus is very broad in comparison to other DRAM reminiscences reminiscent of DDR4 or GDDR5.<br>
<br>An HBM stack of four DRAM dies (4-Hello) has two 128-bit channels per die for a complete of 8 channels and a width of 1024 bits in complete. A graphics card/GPU with four 4-Hi HBM stacks would subsequently have a memory bus with a width of 4096 bits. In comparison, the bus width of GDDR reminiscences is 32 bits, with sixteen channels for a graphics card with a 512-bit memory interface. HBM helps as much as 4 GB per bundle. The larger number of connections to the memory, relative to DDR4 or GDDR5, required a new methodology of connecting the HBM memory to the GPU (or other processor). AMD and Nvidia have each used purpose-built silicon chips, referred to as interposers, to connect the memory and GPU. This interposer has the added benefit of requiring the memory and processor to be bodily close, reducing memory paths. Nonetheless, as semiconductor device fabrication is considerably dearer than printed circuit board manufacture, this provides price to the final product.<br>
<br>The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into unbiased channels. The channels are completely independent of one another and are usually not necessarily synchronous to one another. The HBM DRAM uses a large-interface structure to realize high-speed, low-power operation. Every channel interface maintains a 128-bit information bus working at double information price (DDR). HBM helps transfer charges of 1 GT/s per pin (transferring 1 bit), yielding an total bundle bandwidth of 128 GB/s. The second generation of Excessive Bandwidth Memory, HBM2, also specifies up to eight dies per stack and doubles pin switch charges as much as 2 GT/s. Retaining 1024-bit wide access, HBM2 is in a position to succeed in 256 GB/s memory bandwidth per bundle. The HBM2 spec permits up to eight GB per package. HBM2 is predicted to be especially useful for efficiency-sensitive client functions corresponding to digital actuality. On January 19, 2016, [Memory Wave](https://git.sumedangkab.go.id/esmeraldalessa) Samsung introduced early mass production of HBM2, at up to eight GB per stack.<br>
<br>In late 2018, JEDEC introduced an replace to the HBM2 specification, providing for increased bandwidth and capacities. As much as 307 GB/s per stack (2.5 Tbit/s efficient data rate) is now supported in the official specification, though merchandise operating at this speed had already been available. Additionally, the replace added support for 12-Hi stacks (12 dies) making capacities of up to 24 GB per stack possible. On March 20, 2019, Samsung announced their Flashbolt HBM2E, featuring eight dies per stack, a switch fee of 3.2 GT/s, offering a total of sixteen GB and 410 GB/s per stack. August 12, 2019, SK Hynix announced their HBM2E, featuring eight dies per stack, a transfer price of 3.6 GT/s, providing a complete of 16 GB and 460 GB/s per stack. On July 2, 2020, SK Hynix introduced that mass production has begun. In October 2019, Samsung announced their 12-layered HBM2E. In late 2020, Micron unveiled that the HBM2E customary can be updated and alongside that they unveiled the following normal often known as HBMnext (later renamed to HBM3).<br>[siol.net](https://siol.net/horoskop/dnevni/tehtnica)